Erase behavior of charge trap flash memory devices using high-k dielectric as blocking oxide liner

Ramesh, SivaSivaRameshAjaykumar, ArjunArjunAjaykumarBastos, JoaoJoaoBastosBreuil, LaurentLaurentBreuilArreghini, AntonioAntonioArreghiniNyns, LauraLauraNynsSoulie, Jean-PhilippeJean-PhilippeSoulieRagnarsson, Lars-AkeLars-AkeRagnarssonSchleicher, FilipFilipSchleicherJossart, NicoNicoJossartStiers, JimmyJimmyStiersVan den Bosch, GeertGeertVan den BoschRosmeulen, MaartenMaartenRosmeulen2021-10-292021-10-292020https://imec-publications.be/handle/20.500.12860/35801Erase behavior of charge trap flash memory devices using high-k dielectric as blocking oxide linerMeeting abstracthttps://www.ieeesisc.org/programs/2020_SISC_technical_program.pdf