Analog application of SOI nFinFETs with different TiN gate electrode thickness operating at cryogenic temperatures

Rodrigues, M.M.RodriguesGaleti, M.M.GaletiCollaert, NadineNadineCollaertSimoen, EddyEddySimoenClaeys, CorCorClaeysMartino, J.A.J.A.Martino2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/17887Analog application of SOI nFinFETs with different TiN gate electrode thickness operating at cryogenic temperaturesProceedings paper