Ge-H empirical potential and simulation of Si epitaxy on Ge(100) by chemical vapor deposition from SiH4

Yang, LijunLijunYangPourtois, GeoffreyGeoffreyPourtoisCaymax, MattyMattyCaymaxCeulemans, ArnoutArnoutCeulemansHeyns, MarcMarcHeyns2021-10-182021-10-1820091098-0121https://imec-publications.be/handle/20.500.12860/16572Ge-H empirical potential and simulation of Si epitaxy on Ge(100) by chemical vapor deposition from SiH4Journal article