Improved generation lifetime model for the electrical characterization of single- and double-gate SOI nMOSFETs

Galeti, M.M.GaletiMartino, J.A.J.A.MartinoSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-172021-10-1720080268-1242https://imec-publications.be/handle/20.500.12860/13746Improved generation lifetime model for the electrical characterization of single- and double-gate SOI nMOSFETsJournal article