The impact of electric field strength on the accuracy of boron dopant quantification in silicon using atom probe tomography

Guerguis, BavleyBavleyGuerguisCuduvally, RamyaRamyaCuduvallyMorris, RichardRichardMorrisArcuri, GabrielGabrielArcuriLangelier, BrianBrianLangelierBassim, NabilNabilBassim2024-09-132024-09-132024-DEC0304-3991WOS:001306875100001https://imec-publications.be/handle/20.500.12860/44479The impact of electric field strength on the accuracy of boron dopant quantification in silicon using atom probe tomographyJournal article10.1016/j.ultramic.2024.114034WOS:001306875100001DIRECTIONAL WALKDEPENDENCEEVENTSMEDLINE:39205346