Sub-threshold SRAM design in 14 Nm FinFET technology with improved access time and leakage power

Zenali, BehzadBehzadZenaliMadsen, JKJKMadsenRaghavan, PraveenPraveenRaghavanMoradi, FarshadFarshadMoradi2021-10-232021-10-232015https://imec-publications.be/handle/20.500.12860/26231Sub-threshold SRAM design in 14 Nm FinFET technology with improved access time and leakage powerProceedings paperhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7309541