Radiation induced lattice defects in InGaP/InGaAs P-HEMTs and their effect on device performance

Ohyama, HidenoriHidenoriOhyamaSimoen, EddyEddySimoenKuroda, S.S.KurodaClaeys, CorCorClaeysTakami, Y.Y.TakamiHakata, T.T.HakataSunaga, H.H.Sunaga2021-10-142021-10-141999https://imec-publications.be/handle/20.500.12860/3727Radiation induced lattice defects in InGaP/InGaAs P-HEMTs and their effect on device performanceProceedings paper