Heavy ion damage in ultra-thin gate oxide SOI MOSFETs

Cester, A.A.CesterGarardin, S.S.GarardinPaccagnella, A.A.PaccagnellaSimoen, EddyEddySimoenClaeys, CorCorClaeysCandelori, A.A.Candelori2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/10202Heavy ion damage in ultra-thin gate oxide SOI MOSFETsProceedings paper