Optimized ultra-low thermal budget process flow for advanced high-K / metal gate first CMOS using laser-annealing technology

Ortolland, ClaudeClaudeOrtollandRagnarsson, Lars-AkeLars-AkeRagnarssonFavia, PaolaPaolaFaviaRichard, OlivierOlivierRichardKerner, ChristophChristophKernerChiarella, ThomasThomasChiarellaRosseel, ErikErikRosseelOkuno, YasutoshiYasutoshiOkunoAkheyar, AmalAmalAkheyarTseng, JoshuaJoshuaTsengEveraert, Jean-LucJean-LucEveraertSchram, TomTomSchramKubicek, StefanStefanKubicekAoulaiche, MarcMarcAoulaicheCho, Moon JuMoon JuChoAbsil, PhilippePhilippeAbsilBiesemans, SergeSergeBiesemansHoffmann, Thomas Y.Thomas Y.Hoffmann2021-10-182021-10-182009https://imec-publications.be/handle/20.500.12860/15951Optimized ultra-low thermal budget process flow for advanced high-K / metal gate first CMOS using laser-annealing technologyProceedings paper