Characterization of reduced-pressure chemical vapor deposition polycrystalline silicon germanium deposited at temperatures <= 550 degrees C

Sedky, S.S.SedkyWitvrouw, AnnAnnWitvrouwCaymax, MattyMattyCaymaxSaerens, A.A.SaerensVan Houtte, P.P.Van Houtte2021-10-142021-10-142002https://imec-publications.be/handle/20.500.12860/6814Characterization of reduced-pressure chemical vapor deposition polycrystalline silicon germanium deposited at temperatures <= 550 degrees CJournal article