Combined PEALD gate-dielectric and in-situ SiN cap-layer for reduced Vth shift and RDS-ON dispersion of AlGaN/GaN HEMTs on 200 mm Si wafer

Ronchi, NicoloNicoloRonchiDe Jaeger, BriceBriceDe JaegerVan Hove, MarleenMarleenVan HoveRoelofs, RobinRobinRoelofsWu, Tian-LiTian-LiWuHu, JieJieHuKang, XuanwuXuanwuKangDecoutere, StefaanStefaanDecoutere2021-10-222021-10-222014https://imec-publications.be/handle/20.500.12860/24452Combined PEALD gate-dielectric and in-situ SiN cap-layer for reduced Vth shift and RDS-ON dispersion of AlGaN/GaN HEMTs on 200 mm Si waferProceedings paper