Beyond interface: the impact of oxide border traps on InGaAs and Ge n-MOSFETs

Lin, DennisDennisLinAlian, AliRezaAliRezaAlianGupta, S.S.GuptaYang, B.B.YangBury, ErikErikBurySioncke, SonjaSonjaSionckeDegraeve, RobinRobinDegraeveToledano Luque, MariaMariaToledano LuqueKrom, RaymondRaymondKromFavia, PaolaPaolaFaviaBender, HugoHugoBenderCaymax, MattyMattyCaymaxSaraswat, K.C.K.C.SaraswatCollaert, NadineNadineCollaertThean, AaronAaronThean2021-10-202021-10-202012https://imec-publications.be/handle/20.500.12860/21032Beyond interface: the impact of oxide border traps on InGaAs and Ge n-MOSFETsProceedings paper