Compensating mask topography effects in CPL through-pitch solutions toward the 45nm node

Bekaert, JoostJoostBekaertPhilipsen, VickyVickyPhilipsenVandenberghe, GeertGeertVandenberghevan den Broeke, DougDougvan den BroekeDegel, WolfgangWolfgangDegelZibold, AxelAxelZibold2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/10077Compensating mask topography effects in CPL through-pitch solutions toward the 45nm nodeProceedings paper