BTI reliability and time-dependent variability of stacked gate-all-around Si nanowire transistors

Vaisman Chasin, AdrianAdrianVaisman ChasinFranco, JacopoJacopoFrancoKaczer, BenBenKaczerPutcha, VamsiVamsiPutchaWeckx, PieterPieterWeckxRitzenthaler, RomainRomainRitzenthalerMertens, HansHansMertensHoriguchi, NaotoNaotoHoriguchiLinten, DimitriDimitriLintenRzepa, GerhardGerhardRzepa2021-10-242021-10-242017https://imec-publications.be/handle/20.500.12860/29618BTI reliability and time-dependent variability of stacked gate-all-around Si nanowire transistorsProceedings paperhttp://ieeexplore.ieee.org/document/7936422/