Yesayan, A.A.YesayanJazaeri, F.F.JazaeriParvais, BertrandBertrandParvaisSallese, J. M.J. M.Sallese2026-01-222026-01-222025-09-260018-9383https://imec-publications.be/handle/20.500.12860/58714This article presents an analytical model of the barrier layer in GaN-MISHEMT that predicts a limitation of the channel charge density that is expected to reach an asymptotic value under high gate voltages, a feature that was not reported before. We find that this behavior is very sensitive to the device parameters such as the AlGaN barrier thickness, composition, and polarization-induced charge density. Explicit relationships for charge saturation in the quantum well (QW) are proposed and can be used to optimize GaN-MISHEMT architectures.engJournal article10.1109/TED.2025.3610338WOS:001582342800001ELECTRON-MOBILITY TRANSISTORINDUCED CHARGEMOS-HEMTALGAN/GANDENSITYMODEL