Positive bias temperature instability in nMOSFETs with ultra-thin Hf-silicate gate dielectrics

Crupi, FeliceFeliceCrupiPace, C.C.PaceCocorullo, G.G.CocorulloGroeseneken, GuidoGuidoGroesenekenAoulaiche, MarcMarcAoulaicheHoussa, MichelMichelHoussa2021-10-162021-10-162005-06https://imec-publications.be/handle/20.500.12860/10268Positive bias temperature instability in nMOSFETs with ultra-thin Hf-silicate gate dielectricsJournal article