Gated-diode study of corner and peripheral leakage current in high-energy neutron irradiated silicon p-n junctions

Czerwinski, A.A.CzerwinskiSimoen, EddyEddySimoenPoyai, AmpornAmpornPoyaiClaeys, CorCorClaeysOhyama, H.H.Ohyama2021-10-152021-10-152003https://imec-publications.be/handle/20.500.12860/7373Gated-diode study of corner and peripheral leakage current in high-energy neutron irradiated silicon p-n junctionsJournal article