Ge chemical vapor deposition on GaAs and In0.53Ga0.47As for low resistivity ohmic III-V nMOSFETs source/drain contacts

Vincent, BenjaminBenjaminVincentFirrincieli, AndreaAndreaFirrincieliWaldron, NiamhNiamhWaldronWang, W.-E.W.-E.WangFranquet, AlexisAlexisFranquetDouhard, BastienBastienDouhardBender, HugoHugoBenderVandervorst, WilfriedWilfriedVandervorstLoo, RogerRogerLooCaymax, MattyMattyCaymax2021-10-192021-10-192011https://imec-publications.be/handle/20.500.12860/20091Ge chemical vapor deposition on GaAs and In0.53Ga0.47As for low resistivity ohmic III-V nMOSFETs source/drain contactsOral presentation