Carrier scattering induced linewidth broadening in in-situ P-doped Ge layers on Si

Srinivasan, AshwynAshwynSrinivasanPorret, ClémentClémentPorretPantouvaki, MariannaMariannaPantouvakiShimura, YosukeYosukeShimuraGeiregat, PieterPieterGeiregatLoo, RogerRogerLooVan Campenhout, JorisJorisVan CampenhoutVan Thourhout, DriesDriesVan Thourhout2021-10-262021-10-2620180003-6951https://imec-publications.be/handle/20.500.12860/31842Carrier scattering induced linewidth broadening in in-situ P-doped Ge layers on SiJournal articlehttps://aip.scitation.org/doi/10.1063/1.5040153