CHC degradation of strained devices based on SiON and high-k gate dielectric materials

Amat, E.E.AmatRodriguez, R.R.RodriguezBargallo Gonzalez, MireiaMireiaBargallo GonzalezMartin-Martinez, J.J.Martin-MartinezNafria, M.M.NafriaAymerich, X.X.AymerichVerheyen, PeterPeterVerheyenSimoen, EddyEddySimoen2021-10-192021-10-1920110167-9317https://imec-publications.be/handle/20.500.12860/18476CHC degradation of strained devices based on SiON and high-k gate dielectric materialsJournal article