Quantum transport in an ultra-thin SOI MOSFET: influence of the channel thickness on the I-V characteristics

Croitoru, MihailMihailCroitoruGladilin, VladimirVladimirGladilinFomin, VladimirVladimirFominDevreese, JozefJozefDevreeseMagnus, WimWimMagnusSchoenmaker, WimWimSchoenmakerSoree, BartBartSoree2021-10-172021-10-1720080038-1098https://imec-publications.be/handle/20.500.12860/13571Quantum transport in an ultra-thin SOI MOSFET: influence of the channel thickness on the I-V characteristicsJournal article