On the evolution of strain and electrical properties in as-grown and annealed Si:P epitaxial films for source-drain stressor applications

Dhayalan, Sathish KumarSathish KumarDhayalanKujala, JiriJiriKujalaSlotte, JonatanJonatanSlottePourtois, GeoffreyGeoffreyPourtoisSimoen, EddyEddySimoenRosseel, ErikErikRosseelHikavyy, AndriyAndriyHikavyyShimura, YosukeYosukeShimuraLoo, RogerRogerLooVandervorst, WilfriedWilfriedVandervorst2021-10-252021-10-252018-042162-8769https://imec-publications.be/handle/20.500.12860/30620On the evolution of strain and electrical properties in as-grown and annealed Si:P epitaxial films for source-drain stressor applicationsJournal articlehttp://jss.ecsdl.org/content/7/5/P228.abstract