Superior NBTI reliability of SiGe channel pMOSFETs: replacement Gate, FinFETs, and impact of body bias

Franco, JacopoJacopoFrancoKaczer, BenBenKaczerEneman, GeertGeertEnemanRoussel, PhilippePhilippeRousselGrasser, T.T.GrasserMitard, JeromeJeromeMitardRagnarsson, Lars-AkeLars-AkeRagnarssonCho, Moon JuMoon JuChoWitters, LiesbethLiesbethWittersChiarella, ThomasThomasChiarellaTogo, MitsuhiroMitsuhiroTogoWang, Wei-EWei-EWangHikavyy, AndriyAndriyHikavyyLoo, RogerRogerLooHoriguchi, NaotoNaotoHoriguchiGroeseneken, GuidoGuidoGroeseneken2021-10-192021-10-192011https://imec-publications.be/handle/20.500.12860/18926Superior NBTI reliability of SiGe channel pMOSFETs: replacement Gate, FinFETs, and impact of body biasProceedings paper