Dombrowski, KaiKaiDombrowskiFischer, A.A.FischerDietrich, B.B.DietrichDe Wolf, IngridIngridDe WolfBender, HugoHugoBenderPochet, SandrineSandrinePochetSimons, VeerleVeerleSimonsRooyackers, RitaRitaRooyackersBadenes, GonçalGonçalBadenesStuer, CindyCindyStuerVan Landuyt, J.J.Van Landuyt2021-10-062021-10-061999https://imec-publications.be/handle/20.500.12860/3427Determination of stress in shallow trench isolation for deep submicron MOS devices by UV Raman spectroscopyProceedings paper