P-type poly-Si/SiOx contact by aluminium-induced crystallization of amorphous silicon

Sharma, RajivRajivSharmaSzlufcik, JozefJozefSzlufcikSivaramakrishnan Radhakrishnan, HariharsudanHariharsudanSivaramakrishnan RadhakrishnanPoortmans, JefJefPoortmans2021-12-092021-11-062021-12-0920220927-0248WOS:000710043800002https://imec-publications.be/handle/20.500.12860/38392P-type poly-Si/SiOx contact by aluminium-induced crystallization of amorphous siliconJournal article10.1016/j.solmat.2021.111416WOS:000710043800002POLYCRYSTALLINE SILICONLAYER EXCHANGESOLAR-CELLSTHIN-FILMSIGROWTHTEMPERATURETHICKNESSINTERFACE