Side and Corner Region Non-Uniformities in Grown SiO2 and Their Implications on Current, Capacitance and Breakdown Characteristics

Bastos, JoaoJoaoBastosO'Sullivan, BarryBarryO'SullivanHigashi, YusukeYusukeHigashiVaisman Chasin, AdrianAdrianVaisman ChasinFranco, JacopoJacopoFrancoArimura, HiroakiHiroakiArimuraGanguly, JishnuJishnuGangulyCapogreco, ElenaElenaCapogrecoSpessot, AlessioAlessioSpessotHoriguchi, NaotoNaotoHoriguchi2024-08-162024-08-162024979-8-3503-6977-91541-7026WOS:001229691100171https://imec-publications.be/handle/20.500.12860/44323Side and Corner Region Non-Uniformities in Grown SiO2 and Their Implications on Current, Capacitance and Breakdown CharacteristicsProceedings paper10.1109/IRPS48228.2024.10529495979-8-3503-6976-2WOS:001229691100171OXIDE LEAKAGE CURRENTSOXIDATIONREDUCTION