Influence of the strain-relaxation induced defect creation on the lekage current of embedded Si1-xGex source/drain junctions

Bargallo Gonzalez, MireiaMireiaBargallo GonzalezSimoen, EddyEddySimoenVissouvanadin Soubaretty, BertrandBertrandVissouvanadin SoubarettyEneman, GeertGeertEnemanVerheyen, PeterPeterVerheyenLoo, RogerRogerLooClaeys, CorCorClaeysMachkaoutsan, VladimirVladimirMachkaoutsanTomasini, PierrePierreTomasiniThomas, ShawnShawnThomas2021-10-172021-10-172009-061610-1634https://imec-publications.be/handle/20.500.12860/14948Influence of the strain-relaxation induced defect creation on the lekage current of embedded Si1-xGex source/drain junctionsJournal article