Selective epitaxy of Si/SiGe to improve pMOS devices by recessed Source/Drain or buried SiGe channels

Loo, RogerRogerLoo2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/12508Selective epitaxy of Si/SiGe to improve pMOS devices by recessed Source/Drain or buried SiGe channelsOral presentation