Nanoscale electrical characterization of HfO2/SiO2/MOS gate stackx with enhanced-CAFM

Nafria, M.M.NafriaBlasco, X.X.BlascoPorti, M.M.PortiAguilera, L.L.AguileraAymerich, X.X.AymerichPetry, JasmineJasminePetryVandervorst, WilfriedWilfriedVandervorst2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/10922Nanoscale electrical characterization of HfO2/SiO2/MOS gate stackx with enhanced-CAFMProceedings paper