Towards 1X DRAM: Improved leakage 0.4 nm EOT STO-based MIMcap and explanation of leakage reduction mechanism showing further potential

Pawlak, MalgorzataMalgorzataPawlakKaczer, BenBenKaczerWang, Wan-ChihWan-ChihWangKim, Min-SooMin-SooKimPopovici, Mihaela IoanaMihaela IoanaPopoviciSwerts, JohanJohanSwertsTomida, KazuyukiKazuyukiTomidaOpsomer, KarlKarlOpsomerSchaekers, MarcMarcSchaekersVrancken, ChristaChristaVranckenGovoreanu, BogdanBogdanGovoreanuBelmonte, AttilioAttilioBelmonteDemeurisse, CarolineCarolineDemeurisseDebusschere, IngridIngridDebusschereAltimime, LaithLaithAltimimeAfanasiev, ValeriValeriAfanasievKittl, JorgeJorgeKittl2021-10-192021-10-192011https://imec-publications.be/handle/20.500.12860/19554Towards 1X DRAM: Improved leakage 0.4 nm EOT STO-based MIMcap and explanation of leakage reduction mechanism showing further potentialProceedings paper