Song, WenyaWenyaSongHens, ZegerZegerHensGrige, ValeriiaValeriiaGrigeSteeno, RoelofRoelofSteenoBai, JingJingBaiDeng, Yu-HaoYu-HaoDengKheradmand, EzatEzatKheradmandRocha, Jaqueline O.Jaqueline O.RochaNakonechnyi, IgorIgorNakonechnyiWalravens, WillemWillemWalravensPintor Monroy, IsabelIsabelPintor MonroyLieberman, ItaiItaiLiebermanUz Zaman, ArmanArmanUz ZamanKim, Joo HyoungJoo HyoungKimWeydts, TristanTristanWeydtsVildanova, MarinaMarinaVildanovaMalinowski, PawelPawelMalinowskiGuerrieri, StefanoStefanoGuerrieri2026-06-152026-06-1520242380-9248https://imec-publications.be/handle/20.500.12860/59715Colloidal quantum dot sensors are disrupting imaging beyond the spectral limits of silicon. In this paper, we present imagers based on InAs QDs as alternative for 1st generation Pb-based stacks. New synthesis method yields 9 nm QDs optimized for 1400 nm and solution-phase ligand exchange results in uniform 1-step coating. Initial EQE is 17.4% at 1390 nm on glass and 5.8% EQE on silicon (detectivity of 7.4×109 Jones). Using metal-oxide transport layers and>300 hour air-stability enable compatibility with fab manufacturing. These results are a starting point towards the 2nd generation quantum dot SWIR imagers.engProceedings paper10.1109/iedm50854.2024.10873395WOS:001692734400077