Arsenic-doped Ge-spiked monoemitter SiGe:C HBTs by means of low-temperature trisilane based epitaxy

You, ShuzhenShuzhenYouDecoutere, StefaanStefaanDecoutereNguyen, DuyDuyNguyenVan Huylenbroeck, StefaanStefaanVan HuylenbroeckSibaja-Hernandez, ArturoArturoSibaja-HernandezVenegas, RafaelRafaelVenegasLoo, RogerRogerLooDe Meyer, KristinKristinDe Meyer2021-10-192021-10-192011https://imec-publications.be/handle/20.500.12860/20181Arsenic-doped Ge-spiked monoemitter SiGe:C HBTs by means of low-temperature trisilane based epitaxyOral presentation