Low frequency noise and fin width study of Si passivated Ge pFinFETs

Vinicius de Oliveira, AlbertoAlbertoVinicius de OliveiraSimoen, EddyEddySimoenGhedini Der Agopian, PaulaPaulaGhedini Der AgopianMartino, Joao AntonioJoao AntonioMartinoMitard, JeromeJeromeMitardWitters, LiesbethLiesbethWittersLanger, RobertRobertLangerCollaert, NadineNadineCollaertClaeys, CorCorClaeysThean, AaronAaronThean2021-10-232021-10-232016https://imec-publications.be/handle/20.500.12860/27553Low frequency noise and fin width study of Si passivated Ge pFinFETsProceedings paper