High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs

Millesimo, M.M.MillesimoFiegna, C.C.FiegnaTallarico, A. N.A. N.TallaricoPosthuma, NielsNielsPosthumaBorga, MatteoMatteoBorgaBakeroot, BenoitBenoitBakerootDecoutere, StefaanStefaanDecoutere2021-12-092021-11-282021-12-0920210018-9383WOS:000711645500060https://imec-publications.be/handle/20.500.12860/38496High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTsJournal article10.1109/TED.2021.3111144WOS:000711645500060DEGRADATIONSTATISTICSIMPACT