Epitaxy of III-V based channels on Si and transistor integration for 12-nm node CMOS

Caymax, MattyMattyCaymaxMerckling, ClementClementMercklingWang, GangGangWangOrzali, TommasoTommasoOrzaliGuo, WeimingWeimingGuoVandervorst, WilfriedWilfriedVandervorstDekoster, JohanJohanDekosterWaldron, NiamhNiamhWaldronThean, AaronAaronThean2021-10-202021-10-202012https://imec-publications.be/handle/20.500.12860/20426Epitaxy of III-V based channels on Si and transistor integration for 12-nm node CMOSProceedings paperIEEE Xplore