Asselberghs, IngeIngeAsselberghsSchram, TomTomSchramSmets, QuentinQuentinSmetsGroven, BenjaminBenjaminGrovenBrems, StevenStevenBremsPhommahaxay, AlainAlainPhommahaxayCott, DaireDaireCottDupuy, EmmanuelEmmanuelDupuyRadisic, DunjaDunjaRadisicde Marneffe, Jean-FrancoisJean-Francoisde MarneffeThiam, ArameArameThiamLi, WaikinWaikinLiDevriendt, KatiaKatiaDevriendtGaur, AbhinavAbhinavGaurVerreck, DevinDevinVerreckMaurice, ThibautThibautMauriceLin, DennisDennisLinMorin, PierrePierreMorinRadu, IulianaIulianaRadu2022-01-272021-11-022022-01-2720202161-4636WOS:000615976200032https://imec-publications.be/handle/20.500.12860/38203Scaled transistors with 2D materials from the 300mm fabProceedings paper978-1-7281-9735-7WOS:000615976200032