Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

Vincent, BenjaminBenjaminVincentGencarelli, FedericaFedericaGencarelliBender, HugoHugoBenderMerckling, ClementClementMercklingDouhard, BastienBastienDouhardPetersen, D.H.D.H.PetersenHansen, O.O.HansenHenrichsen, H.H.H.H.HenrichsenMeersschaut, JohanJohanMeersschautVandervorst, WilfriedWilfriedVandervorstHeyns, MarcMarcHeynsLoo, RogerRogerLooCaymax, MattyMattyCaymax2021-10-192021-10-1920110003-6951https://imec-publications.be/handle/20.500.12860/20093Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor depositionJournal article