A simulation analysis of FIBL in decananometer double-gate MOSFETs with high-k gate dielectrics

Autran, J.L.J.L.AutranMunteanu, D.D.MunteanuBescond, M.M.BescondHoussa, MichelMichelHoussaSaid, A.A.Said2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/10038A simulation analysis of FIBL in decananometer double-gate MOSFETs with high-k gate dielectricsJournal article