Guo, ZixiangZixiangGuoLi, KanKanLiLi, XunXunLiLuo, XuyiXuyiLuoZhang, En XiaEn XiaZhangReed, Robert A.Robert A.ReedSchrimpf, Ronald D.Ronald D.SchrimpfFleetwood, Daniel M.Daniel M.FleetwoodVaisman Chasin, AdrianAdrianVaisman ChasinMitard, JeromeJeromeMitardLinten, DimitriDimitriLinten2024-04-252024-01-082024-04-2520230018-9499WOS:001116676600064https://imec-publications.be/handle/20.500.12860/43366Total-Ionizing-Dose Effects in IGZO Thin-Film TransistorsJournal article10.1109/TNS.2023.3280432WOS:001116676600064ELECTRICAL CHARACTERISTICSRADIATION RESPONSEBORDER TRAPSDEGRADATIONDEPENDENCETFTS