Selective epitaxial growth of high-P Si:P for dource/drain formation in advanced Si nFETs

Rosseel, ErikErikRosseeldhayalan,dhayalanHikavyy, AndriyAndriyHikavyyLoo, RogerRogerLooProfijt, HaraldHaraldProfijtKohen, DavidDavidKohenKubicek, StefanStefanKubicekChiarella, ThomasThomasChiarellaYu, HaoHaoYuHoriguchi, NaotoNaotoHoriguchiMocuta, DanDanMocutaBarla, KathyKathyBarlaThean, AaronAaronTheanBartlett, GregoryGregoryBartlettMargetis, JoeJoeMargetisBhargava, NupurNupurBhargavaTolle, JohnJohnTolle2021-10-232021-10-232016https://imec-publications.be/handle/20.500.12860/27237Selective epitaxial growth of high-P Si:P for dource/drain formation in advanced Si nFETsMeeting abstracthttp://ma.ecsdl.org/content/MA2016-02/30/2003.abstract