Electron-electron interaction signature peak in the substrate current versus gate voltage characteristics of N-channel silicon MOSFETS

Kottantharayil, AnilAnilKottantharayilMahapatra, S.S.MahapatraEisele, I.I.Eisele2021-10-142021-10-142002https://imec-publications.be/handle/20.500.12860/6496Electron-electron interaction signature peak in the substrate current versus gate voltage characteristics of N-channel silicon MOSFETSJournal article