Impact of interface layer on charge trapping in Si:HfO2 based FeF FT

Jung, TaehwanTaehwanJungO'Sullivan, BarryBarryO'SullivanRonchi, NicoloNicoloRonchiLinten, DimitriDimitriLintenShin, ChanghwanChanghwanShinVan Houdt, JanJanVan Houdt2022-01-122021-11-022022-01-122022-01-1220201930-8841WOS:000659349800014https://imec-publications.be/handle/20.500.12860/37867Impact of interface layer on charge trapping in Si:HfO2 based FeF FTProceedings paper10.1109/IIRW49815.2020.9312866978-1-7281-7058-9WOS:000659349800014MEMORY WINDOWHAFNIUM OXIDE