Mechanism of positive-bias temperature instability in sub-1 nm TaN/HfN/HfO2 gate stack with low preexisting traps

Sa, N.N.SaKang, J.F.J.F.KangYang, H.H.YangLiu, X.Y.X.Y.LiuHe, Y.D.Y.D.HeHan, R.Q.R.Q.HanRen, C.C.RenYu, HongYuHongYuYuChan, D.S.H.D.S.H.ChanKwong, D.-L.D.-L.Kwong2021-10-162021-10-162005-09https://imec-publications.be/handle/20.500.12860/11148Mechanism of positive-bias temperature instability in sub-1 nm TaN/HfN/HfO2 gate stack with low preexisting trapsJournal article