Riddet, C.C.RiddetWatling, J.R.J.R.WatlingChan, K.H.K.H.ChanAsenov, A.A.AsenovDe Jaeger, BriceBriceDe JaegerMitard, JeromeJeromeMitardMeuris, MarcMarcMeuris2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/17882Monte Carlo simulation study of hole mobility in germanium MOS inversion layersProceedings paper