Demonstration of recessed SiGe S/D and inserted metal gate on HfO2 for high performance pFETs

Verheyen, PeterPeterVerheyenEneman, GeertGeertEnemanRooyackers, RitaRitaRooyackersLoo, RogerRogerLooEeckhout, LieveLieveEeckhoutRondas, DirkDirkRondasLeys, FrederikFrederikLeysSnow, JimJimSnowShamiryan, DenisDenisShamiryanDemand, MarcMarcDemandHoffmann, Thomas Y.Thomas Y.HoffmannGoodwin, MichaelMichaelGoodwinFujimoto, HiromasaHiromasaFujimotoRavit, ClaireClaireRavitLee, Byeong ChanByeong ChanLeeCaymax, MattyMattyCaymaxDe Meyer, KristinKristinDe MeyerAbsil, PhilippePhilippeAbsilJurczak, GosiaGosiaJurczakBiesemans, SergeSergeBiesemans2021-10-162021-10-162005-12https://imec-publications.be/handle/20.500.12860/11509Demonstration of recessed SiGe S/D and inserted metal gate on HfO2 for high performance pFETsProceedings paper