Erdmann, AndreasAndreasErdmannMesilhy, HazemHazemMesilhyEvanschitzky, PeterPeterEvanschitzkySaadeh, QaisQaisSaadehSoltwisch, VictorVictorSoltwischBihr, SimonSimonBihrZimmermann, JoergJoergZimmermannPhilipsen, VickyVickyPhilipsen2022-06-282022-05-222022-05-232022-06-282021978-1-5106-4552-30277-786XWOS:000792657300001https://imec-publications.be/handle/20.500.12860/39877Simulation of polychromatic effects in high NA EUV lithographyProceedings paper10.1117/12.2600931978-1-5106-4553-0WOS:000792657300001Applied physicsEUV lithography, high NA, computational lithography, EUV masks, EUV absorber materials, telecentricity, 3D mask e ects, polychromatic e ects, exposure bandwidth