Low interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics

Chu, L.K.L.K.ChuMerckling, ClementClementMercklingAlian, AliRezaAliRezaAlianDekoster, JohanJohanDekosterKwo, J.J.KwoHong, M.M.HongCaymax, MattyMattyCaymaxHeyns, MarcMarcHeyns2021-10-192021-10-1920110003-6951https://imec-publications.be/handle/20.500.12860/18696Low interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectricsJournal article