Detection of localised variation in the electronic properties of GaN grown by MOCVD and MBE using scanning tunneling microscopy

Hamilton, B.B.HamiltonFerhah, K.K.FerhahDavidson, J.J.DavidsonDawson, P.P.DawsonWhittaker, E.E.WhittakerCheng, T. S.T. S.ChengFoxon, C. T.C. T.FoxonBougrioua, ZahiaZahiaBougriouaThrush, E. J.E. J.ThrushHarris, J. J.J. J.HarrisLee, K. J.K. J.Lee2021-10-062021-10-061999https://imec-publications.be/handle/20.500.12860/3487Detection of localised variation in the electronic properties of GaN grown by MOCVD and MBE using scanning tunneling microscopyMeeting abstract