Source/drain materials for Ge nMOS devices: phosphorus activation in epitaxial Si, Ge, Ge1xSnx and SiyGe1xySnx

Vohra, AnuragAnuragVohraMakkonen, IljaIljaMakkonenPourtois, GeoffreyGeoffreyPourtoisSlotte, JonatanJonatanSlottePorret, ClémentClémentPorretRosseel, ErikErikRosseelKhanam, AfrinaAfrinaKhanamTirrito, MatteoMatteoTirritoDouhard, BastienBastienDouhardLoo, RogerRogerLooVandervorst, WilfriedWilfriedVandervorst2021-10-292021-10-292020-052162-8769https://imec-publications.be/handle/20.500.12860/36280Source/drain materials for Ge nMOS devices: phosphorus activation in epitaxial Si, Ge, Ge1xSnx and SiyGe1xySnxJournal article10.1149/2162-8777/ab8d91