Electron trapping in HfAI0 high-k stack for Flash memory applications: an origin of Vth window closure during cyclling operations

Zheng, X.F.X.F.ZhengRobinson, ColinColinRobinsonZhang, W.D.W.D.ZhangZhang, Jian FuJian FuZhangGovoreanu, BogdanBogdanGovoreanuVan Houdt, JanJanVan Houdt2021-10-192021-10-192011-050018-9383https://imec-publications.be/handle/20.500.12860/20227Electron trapping in HfAI0 high-k stack for Flash memory applications: an origin of Vth window closure during cyclling operationsJournal article